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A feasible computational framework that enables improved predictability of NBTI degradation within commercially available tools is discussed. The NBTI model is used for both delay correction in transistor characterization data and real-time circuit operation where recovery is present. The complementary nature of implementation is readily incorporated into existing model extraction and verification...
A model predicting the negative bias temperature instability (NBTI) reliability of high performance nitrided oxides is developed from discrete p-type metal-oxide-semiconductor field effect transistor (PMOSFET) data and verified with ring oscillator degradation in various frequencies for up to 1 GHz. Based on the experimental data and the simulation results, hole traps generation is considered to be...
A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.
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