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To extend a carrier mobility improvement by strain engineering in high-density and small-gate-space complementary metal-oxide-semiconductor (CMOS) circuits, we have proposed a new stress memorization technique (SMT) that uses a strain proximity free technique (SPFT) to demonstrate the mobility improvement through multiple strain-gate engineering. The electron mobility of n-channel metal-oxide-semiconductor...
As the conventional scaling of CMOS technology is reaching its physical limitations, new materials and processes hold promise of giving CMOS a new lease on life. In order to turn an opportunity into a reality, the semiconductor industry is confronted with a daunting task of managing and co-integrating an unprecedented confluence of innovative approaches: high-k dielectric materials (HfO2, HfSiON)...
MOSFET gate oxide scaling limits are examined with respect to time-dependent breakdown, defects, plasma process damage, mobility degradation, poly-gate depletion, inversion layer thickness, tunneling leakage, charge trapping, and gate delay. It is projected that the operating field will stay around 5 MV/cm for reliability and optimum speed. Tunneling leakage prevents scaling below 2 nm, which is sufficient...
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