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A New CMOS resistor based current mirror with extremely low voltage requirement at input (in the range of a few mV) and output voltage requirement of about one Vds is presented. The proposed structure combines the advantages of wide input swing, wide output swing, large output impedance, low input impedance and high linearity altogether, which make it attractive for high performance low-voltage and...
This paper presents a new high performance 1.2 V – 0.18 µm CMOS differential voltage-to-frequency converter (dVFC). The proposed dVFC works properly over the whole differential common mode input providing an output frequency range of 0.0 – 0.9 MHz with 0.015 % linearity error for a −40 to 120 °C temperature range and a 30 % supply voltage variation. Power consumption is below 65 µW, which makes it...
This paper presents an overview of MOS device characteristics and its use as voltage controlled resistors. A modified gate driving mechanism is proposed to enhance the MOS resistor properties. Generally, MOS resistors behave linearly only for a small value of Drain-to-Source voltage (VDS). With the new scheme, the non-linearity that arises out of its dependence on VDS is removed and the linearity...
A high intercept points, cost-effective, and power-efficient switching FET double balanced mixer (DBM) is reported. The Switching FET DBM demonstrated in this work offers input intercept points (IIP3) and conversion loss typically 44 dBm and 8.5 dB respectively with 15 dBm LO power for the frequency band (RF: 900-2150 MHz, LO: 850-1950 MHz, IF: 50-200 MHz). The measured interport isolation is typically...
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