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We demonstrate the modular integration of a high-voltage SiGe:C HBT with 50V BVCEO into a low cost industrial 0.25 μm SiGe:C BICMOS process. The chosen approach of a lateral drift region is very similar to the construction principles applied to the construction of integrated high voltage LDMOS transistors. The construction of a lateral drift region avoids deep collector wells formed by ion implantation...
In this paper, a characteristic impedance of rectifying circuit of the differential rectenna unit is investigated experimentally. It operates in a differential mode, and effectively integrates an antenna array feed circuit with a rectifying circuit.
We demonstrate the increase of available collector emitter voltage of integrated vertical bipolar transistors by means of an additional lateral drift region introduced between sub collector and collector contact region. The chosen approach enables the fabrication of high voltage bipolar transistors for RF power applications alternatively to the construction of deep collector wells in vertical direction...
In this paper the signal integrity was researched. signal integrity of high speed digital circuit was achieved by optimizing topological structure of transmission lines, matching terminal impedance, setting up reasonable shielding structure. Power integrity was achieved by adding filter circuit. Ultra broadband microwave network, digital circuit and power-supply distribution circuits were integrated,...
This paper presents the 5.8 GHz high sensitivity rectenna array with advanced microstrip-type rectifiers and circularly patch antennas achieving a good balance between a high-efficiency and RF weak power operation. The fabricated rectenna element has achieved RF-DC conversion efficiency of 54% at input RF power of 1mW. Furthermore, we have proposed the novel structure which enhances robustness to...
This paper presents the concept and design of a highly integrated KA-band frontend module. In detail, the integration and packaging techniques, which combine the antenna, the RF circuitry and the cooling system within one functional block are discussed. It will be shown that these system concepts can be applied for large antenna arrays as needed to fulfil link budget requirements for the intended...
Summary form only given. L-3 Communications continues development and testing of a moderate power helix TWT incorporating a new low-voltage high-transconductance field emitter array cold cathode developed by SRI International. The TWT employs a custom electron gun required to control the high beam space charge density created in the acceleration region between the HV cathode surface and the grounded...
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