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A self-heating parameter extraction method for a circuit simulation model is discussed based on the transient drain current measurement, by using an 18-V LDMOS as a test device. Important quantities for self-heating models, self-heating-free drain current, thermal resistance , and thermal capacitance are directly and simultaneously extracted from the transient current measurements...
It is well known that software is a powerful tool for circuit simulation and analysis, conceived to verify electronic systems. However, some kind of analyses may not be completed with only one software suit, due to the nature of the system under test. In this work, a technique is presented to overcome some limitations that are present, in particular, when a simulation has to be done with a system...
This paper discusses the problem of determining a thermal model of an electronic system based on the spectral analysis of its step temperature response. The proposed method yields equivalent RC Cauer ladder thermal models, which consist of only a few RC stages, but produce very accurate estimates of circuit temperature. Moreover, the values of model elements have physical significance. Such a thermal...
The constant scaling of integrated devices is accompanied by an increase of on-chip current and power densities which are responsible for important thermal issues. Designers need efficient electro-thermal simulators to deal with such issues. The paper presents a simulator which allows to take accurately the thermal aspects into account through the coupling of an automatically generated thermal network...
An electro-thermal simulation model of a GTO thyristor operating in a pulse-power circuit is documented. The principle goal of this investigation was to examine an apparent current interruption derating advantage of the GTO at low frequency by tracking the generation, transfer, and dissipation of energy within the GTO structure and establishing a clear understanding of the localized heating phenomenon...
Due to technology scaling and increasing power density thermal issues in today's VLSI integrated circuits are of very high importance. Nowadays, more than a half of IC failures is caused by exceeded heating of a semiconductor structure. Therefore, it is necessary to constantly develop accurate methods capable of predicting temperature profile inside the chip structure. We propose a model to obtain...
This paper explores a coupled electro-thermal modeling approach based on the integration of analytical compact models of semiconductor physics with a distributed three-dimensional description of thermal phenomena. The main motivation for the development of novel approaches resides in the increasing integration level of power components and equipment, which is pushing the validity of essentially-1D...
A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first...
This paper provides a short review of radio frequency/microwave power amplifiers (PAs) and their critical role in a modern satellite communication system. Authorspsila original design contributions are also highlighted.
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