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In this paper, voltage noise of lateral polysilicon p-i-n diodes, biased at constant current levels, is studied. The polysilicon film that forms the active material of the p-i-n diodes was prepared by the crystallization of amorphous silicon either by the solid phase crystallization (SPC) or the sequential lateral solidification (SLS) method; two different thicknesses of 100 and 50 nm were also investigated...
Random Telegraph Noise (RTN) characterization was performed on charge-trap-based TANOS memory cells. The analysis results of cycle stress dependence and cell size scaling are discussed based on single cell measurements. Comparing charge-trap and floating-gate memory technologies different behavior for RTN was obtained. On charge-trap cells a threshold voltage dependence and superimposed noise was...
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