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The shipping bag used in semiconductor industry is very important as a protection guard of products. It provides good protection for finished products after shipping and the handling by the final users. Among various shipping bags, Moisture Barrier Bag (MBB) is the most widely used type in the semiconductor industry because of its high reliability. However, with the technology advancement, the packing...
Rapid thermal annealing in nitric oxide (RTNO) has long been used for the formation of ultrathin silicon oxynitride gate dielectrics. Nitric oxide (NO) furnace anneals are used in the formation of floating gate Flash memory transistor tunnel oxides. Nitrogen is thus, incorporated to improve the oxide reliability during program/erase cycling endurance and data retention. We present here a study of...
Recently, in order to achieve higher performance and higher density in both CMOS/Logic and flash memories, some three-dimensional structures have been paid much attention. In these structures, the Si surfaces with the surface orientation except (100) are used for the channel of transistors/cells. The reliability depending Si surface orientation has been previously reported and worse reliability of...
In this study, wafer level NCA patterning processes for CIS modules have been demonstrated and the effects of whole processes on NCAs were also investigated. At first, NCA solution was directly coated on a bumped wafer with Cu passivation on an image sensing area. Cu was sputtered on a NCA coated wafer, and then sputtered Cu layer was patterned using a photoresist lithography method. Subsequent NCA...
The various methods of multi-nitridation ONO to improve NAND flash memory have been demonstrated in this paper. Excellent cell performance and reliability are obtained compared to convention ONO: (1) 1.9 V program voltage reduction owing to 23 A EOT (equivalant oxide thickness) reduction (2) More than 20% tighter cell Vt distribution width and 30% narrower Vth shift after 10 K cycling can be achieved...
In this paper we will define reliability testing for organic thin film flexible photovoltaics. We will give examples of accelerated lifetime testing (ALT) protocols designed to quantify materials with respect to product specification and to meet customer needs. We will show the correlation between various standardized accelerated testing conditions and discuss progress in packaging. We find examples...
The needs of ambient intelligence and miniaturization of electronics require extensive integration of semiconductor components such as MEMS and sensor packages. A MEMS/sensor package needs access to environment, which is a challenge for MEMS or sensor encapsulation. Film assisted molding (FAM) technology can meet the demand of the functional area opening in the encapsulation. FAM technology can fulfill...
In this paper, we demonstrate TaN/fluorinated HfO2 CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO2 interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively...
Automotive semiconductors are frequently exposed to humidity- if penetrating, a high-ohmic film at the chip surface connects pins to various voltage levels, if they arenpsilat pull up/down protected. Since latest integration combines different technologies/voltage levels, such films trigger destructive malfunctions. A wafer-level test, high ohmically short-circuiting all existing pins to first maximum,...
A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
Poly-Si TFTs, which have the similar structures to the MOSFETs, are now having extensive studies for the applications in display system. The high device mobility of these devices enables the possibility to form both the in-pixel switches and integrated circuits with the poly-Si technology, which may greatly reduce the process complexity and fabrication cost. [1] Though recently several kinds of products...
The relevance of charge pumping (CP) measurements for addressing reliability issues is investigated. This analysis points to the formation of defects in the interfacial SiO2 layer induced by the high-k film and enhanced when increasing the high-k thickness or the temperature anneal. Then, combined with stress under substrate injection regime, CP reveals a generation of defects within the interfacial...
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