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This paper reports that the maximum electric field is a dominant factor for reliability in high-voltage GaN-HEMTs. Four types of the GaN-HEMT with different field plate (FP) structures were tested in continuous switching operation mode to analyze the degradation mechanism and the optimal device design. From the on-resistance degradation dependence on the FP structure, we extract that the gate-edge...
We report the hot carrier reliability (HCR) of 45-nm SOI CMOS technology. Body contacted devices are shown to be more reliable than floating-body devices. Two different body-contacting schemes are investigated (T-body and notched T- body). The effects of total dose irradiation on reliability are investigated. Body contacted devices are shown to be more tolerant to radiation than floating-body devices...
Poly-Si TFTs with vacuum cavity next to the gate-oxide edge (quasi T-gate TFTs) have been fabricated with the wet-etching of gate-oxide and in-situ vacuum encapsulation techniques. The device characteristics of the quasi T-gate TFTs are examined and better than those of conventional TFTs, resulting from the vacuum cavity as the offset region to reduce the leakage current and as the field-induced drain...
Wafer level reliability (WLR) issues of DRAM cell and peripheral transistors are discussed. Since the 70 nm technology node, recessed transistors have been accepted for assuring data retention time of DRAM cell transistors. Various recessed transistor structures suggest that the most important issue in reliability, in addition to optimizing data retention time, is the elimination of local regions...
We performed gate ramp voltage stress on III-V InGaAs based MOSFETs. Stress induces trapped charge and it also leads to interface trap generation, which has detrimental effects on the subthreshold slope and on the transconductance. At high electric fields, before the hard breakdown, a very low-frequency high-current random telegraph noise appears at the gate, which seems to be not correlated with...
This paper reports that the maximum electric field is a dominant factor for current collapse phenomena and reliability in high-voltage GaN-HEMTs. The relation between the dynamic on-resistance increase caused by the collapse phenomena and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly...
It was recently shown that radiation hardened by design (RHBD) annular-gate MOSFETs not only provide total dose radiation tolerance, but can also improve the hot-carrier reliability of advanced CMOS circuits. In this paper, the hot-carrier reliability of standard two-edge and enclosed geometry transistors intended for use in space and strategic environments is demonstrated. Hot-carrier reliability...
Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefore highly desirable. However, it has long been a common believe that the gate oxide breakdown reliability is a show-stopper, particularly at high temperature...
The lifetime and degradation mechanism of a metal- insulator-metal (MIM) on GaAs MMIC after electrostatic discharge (ESD) stress have been investigated. The mean-time- to-failure (MTTF) of MIM after applying ESD stress using a machine model (MM) is experimentally obtained by the time- dependent-dielectric-breakdown (TDDB) method. The nondestructive MIM remaining after ESD stress shows almost the same...
This paper reports comparative reliability of the hot carrier induced electrical performance degradation in power RF LDMOS transistors after novel methods for accelerated ageing tests under various conditions (electrical and/or thermal stress). It is important to understand the effects of the reliability degradation mechanisms on the S-parameters and in turn on static and dynamic parameters. The analysis...
A planar edge termination technique of trenched field limiting ring is investigated by using 2-dimensional numerical analysis and simulation. The better voltage blocking capability and reliability can be obtained by trenching the field-limiting ring site which would be implanted. The trench etch step makes the junction depth deeper so that junction curvature effect and surface breakdown are less happened...
Free volumes or pores in porous ultra-low-k dielectrics enhance the local electric field in the neighborhood. In this paper, this enhanced local electric field is shown to facilitate the transport of charged species such as copper ions, electrons, or holes. This leads to the conclusion that porosity in dielectrics can degrade the insulating property and enhance the dielectric breakdown mechanism
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