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In this letter, we propose a model based on noise analysis for the filamentary switching mechanism in resistance random access memory having bilayer stacks. From the noise analysis results, we concluded that the current flowing during high-resistance state can be described as a trap-assisted current that flows through traps. It has been hypothesized that these traps...
Reliability in phase-change memory (PCM) devices is mainly related to the metastable nature of the amorphous phase, affected by crystallization and structural relaxation (SR) processes. More recently, low-frequency noise has attracted interest both as a valuable investigation tool of the microscopic properties of the chalcogenide material and as a possible reliability topic for future technology nodes...
Low-frequency noise in PCM devices is experimentally investigated providing a new physical model for the amorphous GST (Ge2Sb2Te5) material. Noise intensity is characterized and modelled as a function of bias, temperature and size. Findings from 1/f noise analysis are used to understand the drift mechanism of the amorphous state resistance.
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