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In this paper, the effect of various device design engineerings such as channel engineering, i.e., graded channel (GC), gate stack (GS) engineering (high-), and dual-material gate (DMG) on double-gate MOSFET (DG MOSFET) have been analyzed using ATLAS device simulator. Furthermore, the combinations of these technologies i.e., GC, along with GS engineering, i.e., GCGSDG, and GS together with DMG,...
This paper investigates the impact of device scaling on the bulk-driven MOSFET. In particular, the behavior of gmb is observed across process technology and it is shown that the gmb/gm ratio falls from 0.38 to 0.12 between IBM's 0.25 ??m and 65 nm bulk CMOS processes via simulation. Delta and step doping are then proposed to enable the scaling of bulk-driven MOSFETs down to a channel length of 80...
Interface traps play a crucial role in determining total mobile charge available for conduction and also in determining low field mobility in 4H-SiC MOSFETs. They are important in determining current and transconductance in these devices. Accurate calculation of the interface trap density is essential for characterization of transport in 4H-SiC MOS devices. Typical conduction band edge density of...
For several decades, the output from semiconductor manufacturers has been high volume products with process optimisation being continued throughout the lifetime of the product to ensure a satisfactory yield. However, product lifetimes are continually shrinking to keep pace with market demands. Furthermore there is an increase in dasiafoundrypsila business where product volumes are low; consequently...
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