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This paper presents a predictive electrostatic capacitance and resistance compact model of multiple gate MOSFET with cylindrical conducting channels, taking into account parasitic effects, quantum confinement and quasi-ballistic effects. The model incorporates the dependence of channel length, gate height and width, gate-to-contact spacing, nanowire size, multiple channels, as well as 1-D ultra-narrow...
The compact and low power logic circuit design for multi-pillar vertical MOSFETs has been proposed. The proposed design with the multi-pillar vertical MOSFETs is very practical for considering the load capacitance and resistance by changing the number of the silicon pillars flexibly for the desired channel width of series connected MOSFETs and their layout pattern.
The DC and AC characteristics of the multi-pillar vertical MOSFET's have been studied, considering the silicon pillar diameter thinning cases due to the process fluctuation. In order to suppress the pillar thinning influences, the Inter Contacts design has been proposed, which can realize the compact, high-speed, low-power, and stable circuits with the multi-pillar vertical MOSFET's.
In the vertical MOSFET, due to its device structure, the bottom of its silicon pillar has a certain resistance because there is a diffused silicon wiring area in the bottom. Thereby, this resistance becomes large in the case of the multipillar transistors and also shows asymmetric characteristics between the top and bottom nodes of the pillar. This paper is devoted to examining this resistance for...
For the first time, the relationship between high frequency and dielectric relaxation of dipoles formed at the high-k/SiO2 interface was systematically investigated in La-doped HfSiON devices. Due to the dipole-induced dielectric relaxation, it was found that high frequency performance, especially voltage gain degrades severely caused by a substantial loss in gate capacitance, transconductance, and...
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