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This paper proposes a low-power variation - immune dual-threshold voltage CNFET-based 7T SRAM cell. The proposed CNFET-based 7T SRAM cell offers ~1.2× improvement in standby power, ~1.3× improvement in read delay, ~1.1× improvement in write delay. It offers tighter spread in write access time (1.4× @ OEP (optimum energy point) and 1.2× @ VDD=1 V). It features 56.3% improvement in hold static noise...
Subthreshold circuits are an ideal choice for ultra low power, moderate throughput applications. In subthreshold region to meet the ultra-low power requirement of energy constrained devices, supply voltage less than the threshold voltage is applied. At same frequency, subthreshold circuits show orders of magnitude power saving over superthreshold circuits. In subthreshold operating region, minute...
In this paper, we investigate the transport properties of carbon nanotube field-effect transistors (CNTFETs), with a nonequilibrium Green's function (NEGF) method. Tunneling leakage currents with respect to gate voltages are known effects for MOSFET-like CNTFETs (MOSCNTs). To minimize this phenomenon, we have proposed a structure with a simple modification of the MOSCNT by using lightly doped regions...
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