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This paper proposes two major classes of band-to-band tunneling devices: one with an ultra thin body double gate geometry where the tunneling is completely along the transport direction and the other, where tunneling is expected to be vertical by having a pocket (halo) in the gate-to-source overlap region. In both cases it uses InAs as the channel material. The vertical tunneling structure provides...
Vertical In0.7Ga0.3As tunneling field-effect transistors are demonstrated with a high on-current of 50 μA / μm (in comparison to reported values) and a minimum subthreshold swing (SS) of 86 mV/dec using atomic-layer-deposited HfO2 gate oxide. The tunneling diodes exhibit the gate-bias-dependent Esaki diode behavior with a negative differential resistance under the forward diode bias at various temperatures,...
Band-to-band tunneling transistors (TFETs) made of InSb, Carbon, and GaSb-InAs broken gap heterostructures are simulated using an atomistic and full-band quantum transport solver. The performances of two-dimensional single-gate and double-gate devices as well as three-dimensional gate-all-around structures are analyzed and compared to find the most promising TFET design. All transistor types are able...
Density-gradient theory is discussed as a tool for modeling Sb-based p-channel FETs. The theory's methods and approximations are reviewed with emphasis given to the phenomenological treatment of the quantum confinement. The theory is then illustrated by using it to analyze FETs having InSb, GaSb and InGaSb channels, and to project their scaling characteristics.
Using a 2-D, full-band, atomistic, quantum mechanical simulator based on the sp3 d5 s* tight-binding method with spin-orbit coupling, we investigate the performances of single- and double-gate relaxed InxGa1-xAs p-i-n ultra-thin-body (UTB) tunneling field-effect transistors (TFETs) with 20 nm to 50 nm gate lengths. The ON-current, OFF-current leakage, and subthreshold slope (SS) properties are analyzed...
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