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The evolution of the recoverable (R) component of negative-bias temperature instability (NBTI) is examined, as a function of the number of stress and relaxation cycles, for the SiON, HfSiON, and HfO2 p-MOSFETs. At typical NBTI oxide fields (~7 MV/cm), a steady and substantial decrease of the R component in the case of the HfO2 p-MOSFET is observed, while the R component of the SiON and HfSiON p-MOSFETs...
Negative bias temperature instability (NBTI) recovery for pure-SiO2 and plasma-nitrided oxide (PNO)-based PMOSFET has been investigated at room and below temperature. It is found that the generated hole traps in SiON dielectric under NBTI stress has a broadened energy distribution than that in SiO2 dielectric. This broadened maybe due to nitrogen related traps (K center) In SiON. The traps' location...
This paper studies the influence of the 45deg substrate rotation on the analog parameters of n-type and p-type triple-gate FinFETs with HfSiON gate dielectric, TiN gate material and undoped body. Tall triple-gate n-type and p-type FinFETs were fabricated on SOI wafers with 150 nm thick buried oxide. The fin height (HFin) is 65 nm for all devices. It has been demonstrated that the substrate rotation...
In this paper, high-performance inversion-type E-mode In0.53Ga0.47As and In0.65Ga0.35As MOSFETs with ALD Al2O3 as gate dielectric is demonstrated and systematically studied their subthreshold or weak inversion characteristics. Much more works are needed to make this novel device structure a competitive technology for ultimate CMOS at 22 nm node or beyond. The work is supported by National Science...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
In this work, we combine our recently developed recovery free on-the-fly interface traps measurement (OFIT) and fast-pulsed-measurement (FPM) to conduct a comprehensive study of BTI degradations for both n- and p-MOSFETs with SiON gate dielectric. The results provide the most reliable data for the understanding and modeling of BTI degradation and also provide new insights to re-access the impact of...
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