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Since integration drives wireless business in order to achieve the appropriate cost and form factor, we see significant research concerning front end module (FEM) integration on silicon. In this quest, SOI technology has emerged as the technology of choice since the antenna switch and the power amplifier (PA) have been successfully integrated on SOI. In this paper, we will focus our investigation...
A Class-AB Power Amplifier (PA) integrated circuit for 2.4 GHz is presented. It is designed in SMIC 0.18 μm RF CMOS process. The PA adopts two-stage differential structure. The driver-stage uses cascode structure. In the output-stage common-source structure is employed. The proposed PA provides 24.8 dBm output power with a power-added efficiency (PAE) of 21.2% at 1 dB compression point. It has a small...
A stacked amplifier architecture has been used to achieve high RF output power levels in sub-100nm CMOS. The stacking makes it possible to both operate the power amplifier (PA) from a large supply voltage and implement RF power combining. As a proof of concept, a 6.5-GHz PA has been integrated in a 65-nm standard CMOS technology. The amplifier achieves 27.4-dBm output power with an efficiency of 19...
A low-noise EDGE transmitter implemented in a 65nm CMOS process using direct-conversion architecture for low-band application is presented. The transmitter consists of a programmable-gain I/Q modulator, a frequency divider and a power detector for carrier leakage calibration. The design delivers maximum output power > 1.5 dBm with a 0.5 dB gain step for the 30 dB dynamic range and has < -68...
The design and characterization of a CMOS-MEMS variable capacitor is presented. Measured results demonstrate a tuning ratio of 6.9:1, a quality factor of 28 at 3 GHz, and a self-resonant frequency of 11 GHz, with sub-50 fF parasitic capacitance. Simulations of two frequency-reconfigurable circuits, a low-noise amplifier and a power amplifier, show the importance of low parasitic capacitance for practical...
For MB-OFDM UWB systems with worldwide interoperability the band group 1, 3 and 6 should be included. Multiple bands, high frequency and wideband operation pushes the classical implementation to physically big chip area and high power consumption. Using the latest deep submicron CMOS technology can solve this problem in digital circuits, however it is not in favor of RF and analog performance; furthermore...
An adaptive gate-source biasing scheme to improve the MOSFET RF circuit reliability is presented. The adaptive method automatically adjusts the gate-source voltage to compensate the reduction in the drain current subjected to various device reliability mechanisms. The MOS DC circuit using the adaptive technique is less sensitive to a threshold voltage and mobility degradations from a long-term stress...
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