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SRAMs based on tunneling field effect transistors (TFETs) consume very low static power, but the unidirectional conduction inherent to TFETs calls for special care when designing the SRAM cell. In this work, we make the following contributions, (i) We perform the first study of 6T TFET SRAMs based on both n-type and p-type access transistors and determine that only inward p-type TFETs are suitable...
The nc-Si nonvolatile memory devices with high performance have been fabricated by using general CMOS techniques. High resolution transmission electronic microscope (HRTEM) shows that the average size of nc-Si is 8 nm and its density is 3×1011/cm2. The performance of programming/ erasing and retention time is mainly depending on the quality and thickness of tunnel layer and control layer. The results...
In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM) structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors...
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