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The oxidation of electrochemically etched porous silicon (PSi) has demonstrated success in the formation of device quality localized SOI for CMOS applications. A primary advantage with a localized SOI formation is the ability to integrate novel device structures and optoelectronics (i.e. optical switches, waveguides) with bulk silicon CMOS. The formation of PSi can be done selectively by controlling...
We report a CMOS-compatible vertical MOSFET, which incorporates a frame gate architecture suitable for application in RF circuits. Fabricated surround gate vertical MOSFETs with the frame gate architecture show no degradation of short channel effects when the channel length is scaled, while control devices show significantly degraded sub-threshold slope and DIBL. The frame gate vertical MOSFETs show...
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