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Annihilation of vacancy clusters in monolayer molybdenum diselenide (MoSe2) under electron beam irradiation is reported. In situ high‐resolution transmission electron microscopy observation reveals that the annihilation is achieved by diffusion of vacancies to the free edge near the vacancy clusters. Monte Carlo simulations confirm that it is energetically favorable for the vacancies to locate at...
Integration of solid‐state quantum emitters into nanophotonic circuits is a critical step towards fully on‐chip quantum photonic‐based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride (hBN) have emerged as a viable candidate over the last years. While the fundamental physical properties have been intensively studied, only a few works have focused on the...
Since the advent of graphene ushered the era of 2D materials, many forms of hydrogenated graphene have been reported, exhibiting diverse properties ranging from a tunable bandgap to ferromagnetic ordering. Patterned hydrogenated graphene with micron‐scale patterns has been fabricated by lithographic means. Here, successful millimeter‐scale synthesis of an intrinsically honeycomb‐patterned form of...
2D van der Waals (vdW) semiconductors hold great potentials for more‐than‐Moore field‐effect transistors (FETs), and the efficient utilization of their theoretical performance requires compatible high‐k dielectrics to guarantee the high gate coupling efficiency. The deposition of traditional high‐k dielectric oxide films on 2D materials usually generates interface concerns, thereby causing the carrier...
As one of the typical transition‐metal dichalcogenides with distinct optical and electrical properties, WS2 exhibits tremendous potential for optoelectronic devices. However, its inherent band gap range limits the application in the infrared region. To overcome this draw‐back and improve the sensitivity, P(VDF‐CTFE) is used as a ferroelectric gate to control the states of WS2/Si junctions and achieve...
MoS2 Devices
In article number 2106411, Wen‐Wei Wu and co‐workers reveal the direct observation of an MoS2 device under biasing via powerful in situ transmission electron microscopy (TEM). During in situ TEM biasing, the MoS2 is etched vertically and horizontally; the former is dominated by knock‐on damage, while the latter involves atomic migration induced by Joule heating. Also, the long cracks...
2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior and even electrical breakdown. In this study, the structural evolution of monolayer MoS2 with high bias...
Interlayer Coupling
In article number 2106053, Kyung‐Tae Ko, Kimoon Lee, and co‐workers unveil the crucial role of the Pd 4d orbital distribution on the strong interlayer interaction, which is attributed to the combined effect of local symmetry and unique occupancy. The cover image illustrates that there exists a strong degree of interlayer interaction in 2D PdSe2 originating from the directional...
Interlayer coupling between individual unit layers is known to be critical in manipulating the layer‐dependent properties of two‐dimensional (2D) materials. While recent studies have revealed that several 2D materials with significant degrees of interlayer interaction (such as black phosphorus) show strongly layer‐dependent properties, the origin based on the electronic structure is drawing intensive...
As emerging 2D materials, arsenene and arsenic materials have attracted rising interest in the past few years. The diverse crystalline phases, exotic electrical characteristics, and widespread applications of 2D arsenene and arsenic bring them great research value and utilization potential. Herein, the recent progress of 2D arsenene and arsenic is reviewed in terms of fundamental properties, preparation,...
2D materials with intriguing properties have been widely used in optoelectronics. However, electronic devices suffered from structural damage due to the ultrathin materials and uncontrolled defects at interfaces upon metallization, which hindered the development of reliable devices. Here, a damage‐free Au/h‐BN/Au memristor is reported using a clean, water‐assisted metal transfer approach by physically...
2D heterostructures made of transition metal dichalcogenides (TMD) have emerged as potential building blocks for new‐generation 2D electronics due to their interesting physical properties at the interfaces. The bandgap, work function, and optical constants are composition dependent, and the spectrum of applications can be expanded by producing alloy‐based heterostructures. Herein, the successful synthesis...
The transition toward renewable energy sources requires low‐cost, efficient, and durable electrocatalysts for green H2 production. Herein, an easy and highly scalable method to prepare MoS2 nanoparticles embedded in 3D partially reduced (pr) graphene oxide (GO) aerogel microspheres (MoS2/prGOAMs) with controlled morphology and composition is described. Given their peculiar center‐diverging mesoporous...
In recent years, 2D layered semiconductors have received much attention for their potential in next‐generation electronics and optoelectronics. Wide‐bandgap 2D semiconductors are especially important in the blue and ultraviolet wavelength region, although there are very few 2D materials in this region. Here, monolayer β‐type zirconium nitride chloride (β‐ZrNCl) is isolated for the first time, which...
2D materials are now at the forefront of state‐of‐the‐art nanotechnologies due to their fascinating properties and unique structures. As expected, low‐cost, high‐volume, and high‐quality 2D materials play an important role in the applications of flexible devices. Although considerable progress has been achieved in the integration of a series of novel 2D materials beyond graphene into flexible devices,...
An atomically thin TaSe2 sample, approximately containing two to three layers of TaSe2 nanosheets with a diameter of 2.5 cm is prepared here for the first time and applied on the detection of various Raman‐active molecules. It achieves a limit of detection of 10−10 m for rhodamine 6G molecules. The excellent surface‐enhanced Raman scattering (SERS) performance and underlying mechanism of TaSe2 are...
2D materials are increasingly becoming key components in modern electronics because of their prominent electronic and optoelectronic properties. The central and premise to the entire discipline of 2D materials lie in the high‐quality and scaled preparations. The chemical vapor deposition (CVD) method offers compelling benefits in terms of scalability and controllability in shaping large‐area and high‐quality...
As nanomaterials are becoming a key component in various electronics, 2D nanomaterials are emerging and attracting tremendous attention in the scientific community due to their unique physical, chemical, and structural properties. In recent years, a new family of 2D carbides and nitrides, known as MXenes, has become the center of attention for many electrochemical energy storage and conversion systems...
A photodetector based on 2D non‐layered materials can easily utilize the photogating effect to achieve considerable photogain, but at the cost of response speed. Here, a rationally designed tunneling heterojunction fabricated by vertical stacking of non‐layered In2S3 and Te flakes is studied systematically. The Te/In2S3 heterojunctions possess type‐II band alignment and can transfer to type‐I or type‐III...
Promising applications of metal phosphorous trichalcogenides (M2P2X6 or MPX3) have been predicted in optoelectronics, photoelectrocatalysis, and water‐splitting reactions, mainly due to its wide bandgap. Transition metals are widely used in the synthesis of MPX3, however, divalent cations of alkaline earth metals can also be constituents in MPX3 2D layered structures. Herein, MgPX3 (X = S, Se) are...
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