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Integration of solid‐state quantum emitters into nanophotonic circuits is a critical step towards fully on‐chip quantum photonic‐based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride (hBN) have emerged as a viable candidate over the last years. While the fundamental physical properties have been intensively studied, only a few works have focused on the...
Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB‐) centers, are emerging candidates for quantum sensing. However, the VB‐ defects suffer from low quantum efficiency and, as a result, exhibit weak photoluminescence. In this work, a scalable approach is demonstrated to dramatically enhance the VB‐ emission by coupling to a plasmonic gap cavity. The plasmonic...
In article number 2003005, Sejeong Kim, Ki Tae Nam, and co‐workers achieve a large degree of circular polarization (≈45%) at room temperature using a single chiral plasmonic nanoparticle on a transition metal dichalcogenide (TMD) monolayer. The chiral nanoparticle also induces circularly‐polarized luminescence with a linear excitation, which has been rarely reported.
Valley polarization is among the most critical attributes of atomically thin materials. However, increasing contrast from monolayer transition metal dichalcogenides (TMDs) has so far been challenging. In this work, a large degree of circular polarization up to 45% from a monolayer WS2 is achieved at room temperature by using a single chiral plasmonic nanoparticle. The increased contrast is attributed...
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