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We present an overview of the Fermi‐surface properties for antiferromagnets CeRh2Si2, CeIn3, CeRhIn5, and CeIrSi3, which were clarified from the de Haas–van Alphen (dHvA) experiments under strong magnetic fields up to 170 kOe and high pressures up to 3 GPa. A drastic change of the 4f‐electronic state from a 4f‐localized Fermi surface to a 4f‐itinerant Fermi surface occurs in CeRh2Si2, CeIn3, and CeRhIn...
We carried out the de Haas–van Alphen (dHvA) experiment for an antiferromagnet UCd11 and its non‐5f reference compound ThCd11 to clarify the Fermi surface properties and the true electronic specific‐heat coefficient γ of UCd11. We observed dHvA signals of both compounds and compared the experimental results with the result of theoretical band calculations. The Fermi surfaces of both compounds are...
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