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Radiative recombination efficiency in InN is lower than the other III nitride binary compounds (GaN, AlN). Particularly, photoluminescence (PL) intensity in p‐InN is weaker than that in n‐InN by three orders or more. We investigate the nonradiative recombination (NR) processes in InN with respect to carrier density, activation energy of NR processes, and carrier scattering rate of the inside bulk...
Recently, there is a great effort to increase the deposition area and decrease the process temperature for diamond growth which will enlarge its applications including use of temperature sensitive substrates. In this work, we report on the large area (20 × 30 cm2) and low temperature (250 °C) polycrystalline diamond growth by pulsed linear antenna microwave plasma system. The influence of substrate...
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