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Large‐sized Gd3Al2.3Ga2.7O12:Ce single crystals are grown by the Czochralski method. The distribution of Al and Ga at octahedral (oct‐, 6‐oxygen‐coordinated) and tetrahedral (tet‐, 4‐oxygen‐coordinated) sites in the crystal is studied. Rietveld refinement is used to analyze the site occupation of Al and Ga. The results show that Ga ions with a larger radius than Al ions prefer to occupy the more...
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