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As part of our development of an epitaxial lift‐off process, utilising a sacrificial magnesium sulphide (MgS) layer, we have developed a MgS‐rich ZnMgSSe alloy which provides excellent carrier confinement and resists both oxidation and acid attack. Here the optical transmission of the alloy has been measured and its bandgap determined as a direct transition at 4.19 ± 0.04 eV. Its composition has also...
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