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This paper reviews our recent investigations about semipolar GaN‐based optoelectronic heterostructures grown on foreign substrates. Two basically different approaches are discussed, both making use of epitaxial growth in the polar c‐direction to minimize any crystalline defects. By selective area growth, stripes with triangular cross‐section have been formed with semipolar side‐facets, on which quantum...
The p‐type doping of GaN with Mg, in particular doping of p++ cap layers and its influence on the resistivity of Ni/Au contacts on semipolar (20–21) GaN, has been investigated. For this purpose, we have compared GaN:Mg grown on several semipolar and polar orientations with respect to the acceptor concentration NA measured by electrochemical capacitance voltage techniques. For the same Mg precursor...
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