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Via temperature‐dependent time‐resolved photoluminescence spectroscopy, we investigate the radiative and nonradiative recombination processes in thin (quantum well widths of about 1.5 nm) a‐plane, m‐plane, () and () GaInN/GaN fivefold quantum well structures of varying indium content grown on low defect density GaN substrates and GaN templates. At room temperature, we observe surprisingly...
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