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A theorerical survey will be given of the cyclotron resonance of quasi-two-dimensional polarons in heterostructures. One polaron and many-polaron effects will be discussed. The cyclotron resonance absorption spectrum of a quasi-two-dimensional many-polaron system is calculated with inclusion of the full dynamical screening of the electron-phonon interaction. Experimental results of several groups...
The thermal activation energies of impurities in semiconductors, when plotted against the cubic root of impurity concentration usually give linear plots. Based on an extensive analysis of the existing data for group IV, III-V, II-VI and II-IV-V2 semiconductors in the literature it is demonstrated that the slopes of the linear plots are proportional to the static dielectric constant of the host material...
In both GaAs and InSb common residual contaminants introduce both shallow donor states and other levels normally resonant with the conduction band but taking their predominant character from higher conduction band minima. These states can be made to emerge into the forbidden gap by applying hydrostatic pressure. Judged by the measured pressure coefficients two sets of levels are closely tied to the...
Ab initio self-consistent-field electronic state calculations are carried out for transition metal-related and hydrogen-related complexes in silicon. The first theoretical investigation of the chemical trends in electronic properties of transition metal impurity pair complexes in a semiconductor is reported. Chemical trends in the electronic structure of pair complexes involving a boron atom and a...
In the SDLTS invesigations it is usually supposed that the SDLTS signal is proportional to the lateral defect concentration. It will be shown that this approximation cannot be used without restrictions and investigation of the SDLTS signal as a function of generation parameters is necessary, as will be illustrated by measuring the EL2 distribution in GaAs Schottky barrier.
The band-edge offset (BEO) in semiconductor heterostructures is the most crucial parameter for the interpretation and prediction of the physical properties of such a device. The different experimental procedures for obtaining the BEO are discussed. We have recently proposed a new method, using the electron-beam-induced current (EBIC) as an indication for obtaining flat-band condition when an external...
The Zn, Si and S interstitials in silicon are studied at the hexagonal site with the large unit cell pseudopotential method. The electronic energy scheme and charge density are investigated. The origin of the impurity related states stems from the interactions between the atomic orbitals of the interstitials and the nearest-neighbour bonding orbitals of the host crystal. The energy levels are strongly...
The electronic structure of point defects in silicon and germanium is discussed. After some general remarks on defects generated by doping with elements from group III and V in the Periodic Table, special attention is given to defects with binding energies of the ground state much larger than those predicted by the effective mass theory (EMT) such as double donors (group VI) and double acceptors (group...
The paper considers the consequencies of the simultaneous thermal emission and recapture of carriers in the edge layer of a reverse biased junction on the interpretation of the thermal emission probability measurements. It is concluded that the contribution of the capture process if properly taken into account proves the validity of the Poole-Frenkel model of the electric field dependence.
Positron lifetime measurements and three-gamma annihilation have been applied to study point defects both iin undoped and doped GaAs. The main results are summarized bellow:i)in GaAs(Te) and undoped n-type GaAs the most effective positron traps are divacancies;ii)semiinsulating GaAs-crystals exhibit two-component lifetime spectra, which is related to some clustering of defects presented; which is...
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