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A fully differential, high input power handling, ultra-wideband, variable gain low noise amplifier MMIC for a monostatic MIMO radar was designed in a 130 nm SiGe BiCMOS Technology. The amplifier features an extensively high RF input power survivability, high power handling, ultra-wideband operation of 0.1–50 GHz and a linearly variable gain with 12 dB tuning range. The measured differential mode noise...
A power- and area-efficient Low Voltage Differential Signaling (LVDS) AC coupled receiver for short links is presented. The receiver accommodates the wide LVDS common-mode range without requiring large, board-mounted AC coupling capacitors or a slow, rail-to-rail input stage. Instead, a small, on-chip coupling capacitance generates a pseudo return-to-zero (RZ) pulse that is latched into the receiver...
Over the past decade, SiGe BiCMOS processes have become a mainstay in the Front-End-Module (FEM) of commercial radio products. SiGe BiCMOS processes offer an excellent compromise between the low cost of commodity CMOS and the high performance of III-V based technologies. This allows them to address many of the difficult specification challenges of FEM components in cellular phones and other complex...
A two-stage D-band differential cascode power amplifier is presented, integrated using the IHP 0.13 pm SiGe BiCMOS technology. A compact layout of the cascode stage is proposed to minimize the parasitics contributing to potential instability, achieving 13 dB of gain/stage while operating at 46% of fT, using stage peaking. The PA is analyzed using Booth chart techniques showing that the amplifier can...
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