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A method for improvement of breakdown voltage of the Horizontal Current Bipolar Transistor (HCBT) by application of floating field plates (FFPs) is presented. The FFPs are used for shaping of the potential distribution and the electric field in the base-collector depletion region. The BVCEo improvement from 13 V to 25 V by the addition of one FFP to a double-emitter HCBT is demonstrated by measurements...
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