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Pulsed operation characteristics of a high-power 1550 nm tapered distributed Bragg Reflector (DBR) laser diode are described. The development targets applications such as LIDAR and range finding, which require eye-safe, coherent light sources with a high peak-power. In particular, we employ a regrowth-free technique and AlGaInAs/InP gain structure, and demonstrate a peak power of about 1.6 W (drive-current...
We report the successfully demonstration of a wavelength tunable passive Q-switched Alexandrite laser with semiconductor saturable absorber mirror (SESAM) and using a red diode (AlGaInP) pump laser at 635 nm. This system allows the potential for low-cost, compact wavelength-tunable short pulse sources, compared to active Q-switch pulsing methods [1, 2].
Q-switched lasers operating in the nominally eye-safe 2 μm wavelength region are important for applications such as material processing, medicine, LIDAR systems, and pumping of optical parametric oscillators based on ZnGeP2 or periodically poled GaAs. Many of these benefit from wavelengths above 2.05 μm, which are not accessible by the actually widely used Tm-lasers. The long upper laser level lifetime...
Continuous-wave (CW) DUV laser light sources with high powers have received significant attention in various fields including semiconductor wafer inspection and laser photo-emission electron microscopy [1, 2]. These lasers are typically generated by a cavity-enhanced fourth harmonic generation (4HG) of Nd3+-doped solid-state lasers and Yb3+-doped fiber lasers operating near 1064 nm. In this paper,...
Titanium-doped AI2O3 (Ti:sapphire) laser can be directly pumped by recently developed green and blue indium gallium nitride (InGaN) laser diodes (LDs), and mode-locking operations of the laser with these pump sources have already been reported from several groups. Rohrbacher et al. achieved an average output power of 460 mW using two 2.9-W LDs at 450 nm, and a pulse width of 82 fs was obtained by...
Chemical bonds like H2O, CO, NH3, CO2 show characteristic fingerprints in the wavelength range between 1.9μm and 2.5μm. Sensor and monitoring technologies today especially for the internet of things require on the one hand light sources with low cost, low weight, low power consumption but on the other hand they should have a high brightness performance. The brightness of a diode laser is a measurement...
Motivation and objectives: The technology of Mode-Locked Semi-Conductor Lasers (MLSCL) is a promising candidate for various space applications in the context of high-precision optical metrology, in particular for High Accuracy Absolute Long Distance Measurement (HAALDM). However very challenging performance requirements should be met for these applications: pulse duration<1ps, pulse repetition...
We demonstrate the use of Q-switched microchip [1] MOPA (master-oscillator power-amplifier) systems for generation of sub-100 ps pulses at 532 nm and sub-250 ps pulses at 671 nm. Such short pulses at the visible spectrum could be used for example in fluorescence lifetime measurements, 2-photon microscopy, etc. If compared with mode-locked lasers, Q-switched microchip lasers have intrinsically low...
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