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This work proposes a new method for the extraction of the flatband voltage, effective nanowire width and doping concentration of junctionless nanowire transistors. The accurate extraction of such parameters is essential for the understating of the device behavior and for the prediction of its performance in circuits through analytical models. The method is validated using 3D numerical simulations...
A new analytical static drain current model based on the WKB approximation has been developed for Schottky-Barrier CNTFETs. Electron scattering by acoustic and optical phonons in the channel has been taken into account. By using a simple approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical expression for the drain current in the Landauer-Büttiker...
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