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RF Power amplifier often demands Zero-defect in application. However, it sees non-uniform stress during application. The time depend stress level depends on the input signals. This paper presents a way to predict the gate oxide lifetime, not only for the intrinsic oxide breakdown, but also for the extrinsic oxide breakdown. An appropriate gate oxide screening condition would enable the desired quality...
In this study, impact of traps located at SiO2/Si interface on the time-dependent dielectric breakdown (TDDB) lifetime is investigated by modeling the Weibull distribution in high-k (HK) dielectric stacks. The results show that the interface traps will cause the distortion of Weibull slope of TDDB lifetime, decreasing the growing rate of the probability of breakdown after a long time.
Demand of short failure analysis has been increasing in semiconductor failure analysis. It is known from the previous studies that many short failure analysis methods are suggested. However, it is extremely difficult to identify the short failure location in recent advanced devices due to the fact of optical resolution limit. On the other hand EBAC has been noted as the high resolution method to identify...
The GOX is the most fragile element of a MOS transistor. With the scaling of device, the GOX thickness has been reduced to a few atomic layers, therefore any tiny defects in gate oxide can lead to high leakage current and even gate oxide breakdown. FIB/TEM analysis and chemical wet etching pinhole technology are usually adopted to characterize GOX leakage defect. However, TEM by FIB-cross section...
In this paper, analysis of the gate recess variation on DC and RF characteristics on 0.25um psuedomorphic high electron mobility transistor using Sentaurus TCAD simulation have been carried out. Hydrodynamic transport model have been employed for the simulation. Furthermore, off state breakdown characteristics are also exploited, while exploring the essential features of 2-dimensional electron gas...
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