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Four HfAlO based resistive random access memory (RRAM) devices with different HfO2 percentage (0%, 10%, 90% and 100%) were fabricated using atomic layer deposition (ALD). Three types of electroforming processes were observed with 1mA current compliance (CC), including initial high resistance state (HRS), initial medium resistance state (MRS) and initial low resistance state (LRS). The modulation of...
In this study, we compared the basic switching behaviors of HfO2, Al2O3 and HfAlOx (Hf:Al=9:1) based RRAM with Ti top electrode by setting various compliance currents (1mA, 5mA, 10mA, 15mA). The resistance ratio of HfO2 based RRAM (20 → 320) increases with compliance current whereas it drops not obviously for Al2O3 based RRAM (85→54). HfAlOx (Hf:Al=9:1)) based one has the best resistance ratio (300–440)...
Resistive Random Access Memory (RRAM) can be regarded as a promising candidate on the manipulation of both electrical and magnetic properties. There is a widespread concern about the electrical manipulation of magnetic properties in RRAM devices. In our work, Co/HfO2/Pt RRAM device with magnetic conductive filament (CF) is designed and fabricated. Then the anisotropic magnetoresistance (AMR) effect...
In this paper, we present the experimental I-V and C-V characterization of vertical trench DMOS with different gate electrode recess depths. NBTI/PBTI test, via static bias stress test method was also performed in order to identify possible contaminations of the channel region. Effects of increasing this recess depth on the main electrical and capacitance performances are accurately measured. We concluded...
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