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Organic thin film transistors with indacenodithiophene — benzothiadiazole (C16IDT-BT) as the semiconducting layer was fabricated to investigate the effect of temperature on the charge carrier mobility. To offer guidelines for optimal working conditions, the temperature range was chosen from 300 K to 460 K. Results showed that the hole mobility improved as the temperature increased until a certain...
NOR Flash life-time prediction is usually used by TTF calculation (ex. Vt Shift rate / read verify level / Istring variation etc). So by choosing different criteria and development processes will result in inconsistent product's time-to-failure (Fig1). This time we used the floating gate electrons concentration and temperature variation to calculate the EA(Fig2).
In this study, the maximum spatial resolution of infrared thermal imager is 3 μm, and the gate length of AlGaN/GaN HEMTs is between 0.2 μm and 1 μm. Therefore, the infrared thermal imaging instrument measurement results are only an average temperature that is lower than the actual temperature. By combining infrared thermal imaging with Sentaurus TCAD simulation, the junction temperature of AlGaN/GaN...
In this study, a four-layer stacked chip simulation model is built under standard JEDEC environment, the heat dissipation path and temperature distribution of the stacked chip is analyzed. Based on linear superposition method, a method of estimating the temperature of stacked chip using thermal resistance matrix is proposed, and the function relationship between the power consumption and the element...
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