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The application of techniques utilizing transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and energy dispersive spectroscopy (EDS) to identify the interface and defect property in GaN based materials is presented. Several parameters including STEM camera length and probe size were demonstrated to have significantly influence on image contrast and layer thickness,...
In this paper, a novel signal toggling technique in Electrical Optical Frequency Mapping/ Phase Mapping (EOFM/EOPM) and Electrical Optical probing (EOF) are performed to successfully localized the fault location and identify the physical defect promptly. A function square wave is asserted into the pin of interest, i.e. leakage pin or the function power pin, for EOFM and EOF purposes. This technique...
In this study, we found that inappropriate TU (top Cu metal line) geometry design induced product reliability failures issue. The TU geometry, having poor compatibility with wafer test probe issue, couldn't withstand the stress of wafer test probe resulting in fractures. Due to the inappropriate TU geometry design had major disadvantages in circuits characteristics. Reliability estimations exhibited...
In situ lift out is a mature and well established technique for TEM sample preparation [1]. There are occasions though, when lift out fails, and the TEM lamella falls into the TEM trench during sample preparation. In a previous study [2], the lamella can be rescued through a series of steps involving welding, tilting, cutting free and rewelding the lamella onto a grid or die. In this paper, we detail...
As the process of device is scaling down continually. Engineers are trying their best to challenge the limitations of physics in IC industry. However, power IC like power MOSFET and Insulated Gate Bipolar Transistor (IGBT) still have a high requirement despite device scale — downs. Here, we want to highlight a method to improve defect location in IGSS (Gate — Source leakage) failure, through this...
Failure analysis on static condition (static leakage and standby current level) failed device would not cost long time to find root cause, but dynamic functional failure will. Failure analysis with dynamic strategy to localize a failure point is more significant in complicated function failed IC (Integrated Circuit). This paper would present an efficient strategy to locate the defect using dynamic...
Electron beam absorbed current (EBAC) has been used to isolate defects in BEOL metal stacks. With the increasing layout complexity, metal signal lines often run over 100um area and over multiple metal stacks. This makes SEM inspections during polishing tedious, time consuming and easy to overlook the defect. With the EBAC technique, it often shows the entire routing of the signal line with additional...
Although nano-particles have attracted extensive studies in material science and technology for decades, how to measure the particle size efficiently and conveniently still remains to be a problem unsolved. In this paper, Si nano-particles prepared by annealing a very thin amorphous Si layer were inspected by atomic force microscopy (AFM) as well as SEM and TEM e-beam techniques. Results extracted...
To realize higher spatial resolution than conventional SEM-based nano-probing system, a novel Electron Beam Absorbed Current imaging system was newly developed using a Hitachi HD-2700 200 kV dedicated STEM. Its specimen holder accommodates a mechanical probe for current detection and TEM grid specimen. This holder also has a micrometer-based coarse positioning and piezoelectric-elements-based fine...
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