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This paper mainly demonstrated the fail NMOS suffered lightly doped drain (LDD) & pocket (PK) implantation issue, suspect this loop defects induce the NMOS LDD&PK asymmetry partial missing. Device failure site was located by nano-probing. Based on electrical results, TEM energy-dispersive x-ray spectroscopy (EDX) images obtained from a cross-section, prepared at the designated location, showed...
Scanning microwave impedance microscopy (sMIM) is an emerging electrical mode for scanning probe microscopy (SPM). We apply the technique to the profiling of dopants in semiconductor samples with sub-micron spatial resolution. This work demonstrates the practical application of sMIM for quantitative measurement of the dopant concentration profile in production semiconductor devices. A planar dopant...
A simulation study is conducted to model the behavior of the MOS transistor output response with a resistive defect on gate, with both DC and pulse signal inputs. Nanoprobing is performed on actual transistors in DC and pulse modes to validate the simulation. Compared to a reference transistor, a more resistive gate corresponds to a larger rise time in the dynamic pulse response, while the static...
This paper describes the case study of test method of gate source failure and the fault localization approach with aid of device physics theory. The nominal behaviour of IGBT device is turn on the moment gate voltage reaches the threshold voltage. However, in this case the device turn on before the gate voltage reaches to the ideal threshold voltage due to distracted by Gate-source capacitance. On...
A theory has been developed for geometric variation of trigate FinFETs. This geometric variation includes both line roughness induced variation and oxide-thickness variation, which can be measured from gate capacitance and Ig current variations, respectively. Experimental results show that trigate devices are subject to serious line variations as the fin height scales up and the fin-width scales down,...
In this paper, we present the experimental I-V and C-V characterization of vertical trench DMOS with different gate electrode recess depths. NBTI/PBTI test, via static bias stress test method was also performed in order to identify possible contaminations of the channel region. Effects of increasing this recess depth on the main electrical and capacitance performances are accurately measured. We concluded...
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