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The application of techniques utilizing transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and energy dispersive spectroscopy (EDS) to identify the interface and defect property in GaN based materials is presented. Several parameters including STEM camera length and probe size were demonstrated to have significantly influence on image contrast and layer thickness,...
We characterized plate-like Ni-Sn IMCs in the Sn-2.3wt.%Ag solder bump using high-resolution 3D X-ray microscopy and transmission electron microscopy. Two types of plate-like IMCs (type 1 and 2) were observed in the solder bump. The type 1 is composed of NiSn4, Ni3Sn4 IMCs and Ni. Type 2 is only composed of plate-like NiSn3 IMC. The crystal structures of meta-stable NiSn4 and NiSna IMCs are orthorhombic...
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