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New process conditions involving temperature below 900°C, and then compatible with SOI wafers and CMOS technologies, were successfully developed in order to realize atomic flat interface in MOSFETs. The implementation of these processes did not only reduce the variability of electrical performances but also brought the low frequency noise level down, making MOSFETs fabricated on atomically flat surfaces...
In this paper, Buried-Channel and Native MOSFETs are thoroughly investigated in terms of Low Frequency Noise (LFN) variability for different bias and area conditions. These devices are compared with standard bulk CMOS transistors indicating lower levels of LFN regarding both its mean value and its variability. Moreover a recently proposed compact MOSFET model for LFN and its variability, is validated...
A standardized approach to characterizing low-frequency noise for semiconductor devices is presented in this paper. The purpose of this measurement technique is to easily compare performances of different devices from different technologies in order to develop high-precision low-noise technologies. The methodology which measures noise current at the output of the device is used for accurate model...
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