The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Electromigration (EM) strongly decreases the reliability of micro-electronics interconnects and becomes more problematic as scaling continues. Remedial measures are required, but therefore EM mechanisms first have to be understood. The standard, accelerated EM test methods are time-consuming, destructive and provide only limited physical understanding. We demonstrate that low-frequency (LF) noise...
We have investigated the effects of thickness on the electrical properties of Co2% and In1% co-doped ZnO films (CIZO) grown on glass substrates at room temperature by Radio Frequency (RF) magnetron sputtering technique. The sheet resistance Rsh [Ω], the resistivity ρ [Ω.cm], and the 1/f noise have been analysed as a function of thickness from 50 nm to 450 nm. The electrical properties and 1/f fluctuation...
In this work we present the first Low Frequency Noise results obtained on the new 55 nm BiCMOS technology developed by STMicroelectronics. With this improved technology at higher integration level, SiGe:C Heterojunction Bipolar Transistors will address High Speed & High Data Rate communication systems and smart mobility integrated circuits involved in the future fully automated transportation...
AZO thin films were prepared on glass substrate by RF sputtering at room temperature. The sheet resistance, Rsh [Ω] the resistivity, ρ[Ω.cm] and the 1/f noise were studied as a function of thickness, t from 50 nm to 450 nm. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. Our results show that the resistivity decreases with thickness. The...
Low-frequency noise and I–V characteristics of reverse-biased thin-film chalcopyrite CIGS solar cell with a metal wrap through architecture were measured in order to evaluate the efficiency of edge deletion by a fine grinding and polishing. These electrical measurements were supplemented by a microscale exploration of the edges, electroluminescence mapping, and lock-in IR thermography. Research efforts...
We review results of our studies of the low-frequency electronic noise in quasi-1D TaSe3 nanowires of. The semi-metallic TaSe3 is a quasi-1D van der Waals material with an exceptionally high breakdown current density. Our noise studies showed that TaSe3 nanowires have lower levels of the normalized noise spectral density, SI/I2, compared to carbon nanotubes and graphene. The temperature-dependent...
Terminal voltage fluctuation of lithium-sulfur cells and nickel-metal-hydride cells was measured in different time intervals since cell charging to full capacity. The power noise spectral density is of 1/fα type with exponent a varying in the range from 1 to 1.8. The main noise sources in charge storage systems are: i) fluctuation of potential barrier on the electrode-electrolyte interface (its height...
A simple as possible random process - a random telegraph signal with independent amplitudes, and underpinned by a point process with inter-arrival times specified by a one sided Cauchy probability density function, is shown to have a 1/f power spectral density. Integral, and statistical, expressions for the number of points in a set interval, and the arrival time of the kth point, are specified. An...
We fabricated CNW-FETs using a self-alignment process. We will discuss the plasma processes which improve the device properties of CNW-FETs, such as the gate leak current by O2 plasma etching and internal electrode contact by H2 plasma. H2 plasma etching also reduces the noise power spectral density of the drain current, and noise spectroscopy is useful in examining device properties and improving...
Inspired by the phenomenon of fluorescence intermittency in quantum dots, we introduce small off-states (intermissions) which interrupt the generation-recombination (= g-r) process in a semiconductor material. If the remaining on-states are power-law distributed we obtain an almost pure 1/f spectrum which can be given the form of Hooge's relation. The predicted Hooge coefficient αH combines properties...
The physical quantum theory of 1/f noise describes the infrared-divergent conventional Q 1/f fluctuations of quantum mechanical cross sections and process rates by simple, universal, formulas. We give the resulting formulas for this 1/f noise and phase noise in piezoelectrics, MEMS resonators and sensors, STMs, their piezo-control loop, and currents in ferroelectrics.
A standardized approach to characterizing low-frequency noise for semiconductor devices is presented in this paper. The purpose of this measurement technique is to easily compare performances of different devices from different technologies in order to develop high-precision low-noise technologies. The methodology which measures noise current at the output of the device is used for accurate model...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.