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The results of a study the energy spectrum of the electronic levels in DUWELL structure with 10 layers of quantum dots InAs designed to create a stripe laser at a wavelength of 1.3 microns by low-frequency noise spectroscopy and DLTS are presented. The activation energy 480 meV of the ground state of holes in a layer of quantum dots is determined from the temperature dependence of the power spectral...
Noise properties of the thin films (Ge2Sb2Te5)1−xBix were investigated. Changing the amorphous film on the crystal structure was carried out by varying the voltage to 10 V on the resistor sample in the isothermal conditions at the constant temperature. The temperature varied from 290 to 420 K with 10 K increasing step. It has been shown that introduction of Bi influences the properties of the phase...
Electromigration (EM) strongly decreases the reliability of micro-electronics interconnects and becomes more problematic as scaling continues. Remedial measures are required, but therefore EM mechanisms first have to be understood. The standard, accelerated EM test methods are time-consuming, destructive and provide only limited physical understanding. We demonstrate that low-frequency (LF) noise...
The measurement complex based on the cryostat Janis CCS-400/204N that allows making measurements in vacuum in temperature range 7–500 K is described. Thus a high sensitive measurement complex is developed to investigate noise power spectral density in the frequency range 10−3–104 Hz, temperature range 7–500 K and DC voltage range at samples 0–50 V.
Low-frequency noise and I–V characteristics of reverse-biased thin-film chalcopyrite CIGS solar cell with a metal wrap through architecture were measured in order to evaluate the efficiency of edge deletion by a fine grinding and polishing. These electrical measurements were supplemented by a microscale exploration of the edges, electroluminescence mapping, and lock-in IR thermography. Research efforts...
Analysis of existing theoretical concepts in low-frequency noise generation mechanisms in semiconductor barrier structures is performed. It is shown that investigation and simulation of voltage-noise characteristics offer an opportunity to calculate deep level parameters more precisely and to predict semiconductor devices reliability.
It is shown that the free charge carrier capture-emission process causes both the charge carrier density and mobility fluctuations. In this report we present the calculation results in order to find out how the capture-emission process affects the free charge carrier mobility, and how the latter impacts the low-frequency noise level. The carrier mobility dependence on phonon, impurity and carrier-carrier...
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