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This paper gives a study on the EMI noise problem of motor drives, especially the impact of application of fast-switching SiC devices. First, the noise source model has been analyzed and the two major factors: device switching action and inverter switching frequency have been claimed. Device switching performance analysis has been done to show that the fast switching speed will generate bigger EMI...
This paper presents an improved design space for AC/DC converters utilizing 1,000V SiC MOSFETs by taking advantage of their low conduction and switching losses in a simple and cost-effective two-level topology. An efficiency- and cost-optimized 20 kW hardware prototype Power Factor Correction (PFC) is designed, implemented, tested, and compared against similarly rated AC/DC converter topologies with...
The high power density converter is required due to the strict demands of volume and weight in more electric aircraft, which makes SiC extremely attractive for this application. In this work, a prototype of 50 kW SiC high power density converter with the topology of two-level three-phase voltage source inverter is demonstrated. A gate assisted circuit is further introduced to reduce the switching...
For the first time we report on detailed, quantitative reliability measurements and accelerated life data for > 1,300 of 900V, 10mOhm, 32mm2 SiC MOSFETs being developed for automotive and industrial applications. SiC MOSFETs were characterized and subjected to High-Temperature Reverse Bias (HTRB), High-Temperature Gate Bias (HTGB), Thermal Shock, and High-Humidity High-Temperature Reverse Bias...
This paper presents a comparison of the inductive switching losses between a 1200 V SiC MOSFET half bridge power module with anti-parallel SiC Schottky barrier diodes (SBD) versus the same power module package utilizing only the intrinsic body diode of the SiC MOSFETs. Also presented is a comparison of the same power module utilizing 1700 V devices where the same SBD vs body diode comparisons are...
This paper presents a hybrid technology approach serving as an entry point in the industry of SiC devices at high power levels. The proposal consists of paralleling SiC Schottky diodes with high speed IGBTs in a baseplate-less and solder free module to alleviate the high cost of wide band gap devices, improve performance of the converter and also enhance its reliability. An experimental inverter rated...
This paper presents a high-efficiency, high-speed variable frequency drive (VFD) used in an electrically-assisted turbocharging application with the goal of reducing turbo lag and extracting electrical energy during vehicle braking and deceleration events. To maximize switching frequency and achieve high-temperature operation, SiC MOSFETs are used in lieu of Si IGBTs or MOSFETs. Furthermore, the VFD...
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