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Device characterization of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) from 48 K to 300 K is performed in order to assess the switch's potential performance in superconducting power systems where power densities upward of 6 MW/m3 are required. Forward and reverse channel resistance, leakage current, and threshold voltage will be measured to perform the assessment. The results...
This paper presents a high-efficiency, high-speed variable frequency drive (VFD) used in an electrically-assisted turbocharging application with the goal of reducing turbo lag and extracting electrical energy during vehicle braking and deceleration events. To maximize switching frequency and achieve high-temperature operation, SiC MOSFETs are used in lieu of Si IGBTs or MOSFETs. Furthermore, the VFD...
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