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The development of algorithms and models to be used for prediction of the reliability and health monitoring of components and sensors is of great importance in aerospace, automotive and power generation industry. For this purpose metamodels have been developed that are based on physical simulations and that are able to quantify the impact of uncertainties on system behavior. These surrogate metamodels...
Silicon carbide MOSFETs coming from every manufacturer selling on the market have been simulated using models provided by the respective manufacturers. Simulation results have been compared to datasheet characteristics. Discrepancies were identified and their possible causes have been investigated. This has been complemented with an analysis of each model structure. For model improvement, several...
The reliability of microelectronic devices is often limited by internal local delamination that occurs between the polyimide layer and the re-distribution top metal layer on the chip surface during temperature cycle testing. In order to design reliable microelectronic packages and to avoid additional delay and cost of potential re-designs, such effects should be thoroughly analyzed, understood and...
This paper presents the scope of applicability of Dual-Phase-Lag model in modern electronic structures. Moreover, the investigation of obligatory application of this model, instead of the classical approach based on Fourier-Kirchhoff model, to heat transfer modeling is included. Furthermore, the modified Fourier-Kirchhoff thermal model, containing the special time lag parameter, is also taken into...
This paper includes the analyses related to the thermal model order reduction. The simplified, one-dimensional structure is investigated. The reduction technique based on the moment matching is employed. For this purpose, the Krylov-subspace-based model order reduction method is used. The generation of the reduced Dual-Phase-Lag heat transfer model is carried out using the Arnoldi algorithm. The temperature...
During electrical wafer testing and wire bonding onto pad metallization, oxide layers in Backend-of-Line (BEOL) pad stacks are exposed to the risk of mechanical damage. Subsequent metal migration into oxide cracks leads to electrical device failure. We undertook simulation-based risk assessment using analytical and Finite Element Modelling (FEM) with regard to critical imprint depths in top metallization...
The structural response of power module busbars under harmonic loads is considered using finite element method simulation. Simulation parameters and boundary conditions are considered in terms of their effect on the accuracy of simulation results with relation to real life application. Vibrational analysis was found to be highly sensitive to geometry preparation and constraint in terms of both mechanical...
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