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This paper proposes a wire-bonded design with a unique double-end sourced structure for multi-chip paralleled SiC power modules. The proposed design achieved a reduced power-loop inductance of 7.2 nH, while inheriting the advantages of the conventional wire-bond technology. More importantly, the symmetrical structure of the proposed design brought consistent performances to the paralleled devices...
A de-sat based short-circuit protection scheme using commercial driver for SiC MOSFETs is presented and experimentally verified on 1200V 3-level T-type SiC MOSFET module in this paper. Response time is very critical for the short-circuit protection of SiC MOSFETs due to the limited short-circuit withstand time (SCWT). Soft turn-off is required to avoid high voltage spike during the turn-off of the...
A 100-A, 850-V, solid-state circuit breaker (SSCB) having silicon carbide transistors and diodes was developed. The SSCB conducts 100 A continuously with air cooling in a 32 square-centimeter footprint. It is normally off and unidirectionally blocking, and has a configurable trip response allowing a range of overcurrent transients to be conducted, while maintaining a fast trip response at its fault-current...
In the high-power LED driver system, a single-stage boost-LLC type soft-switched AC-DC converter is usually employed for obtaining the high efficiency and low cost. However, the high bus voltage is its fatal disadvantage due to the PFM control strategy. Thus, this LED driver is only applied in the low ac input voltage case. In order to overcome this problem, an asymmetric PWM (APWM) feed-forward strategy...
This paper focuses on the remaining useful lifetime (RUL) estimation of power MOSFETs, which are stressed by thermal cycling. The relative change in on-state resistance is identified as the aging precursor for die attach solder degradation after exhaustive experiments. A data-driven RUL estimation algorithm based on a linear approximation model is proposed. The empirical coefficients are estimated...
This paper presents an isolated medium-voltage, high-power-quality and high efficiency (over 96%), fast charger for plug-in electric vehicles. The proposed fully modular fast charger uses off-the-shelf Silicon Carbide (SiC) power devices to convert the rectified single-phase 2.4 kV medium-voltage input to variable dc output. The adopted input-series-output-parallel unidirectional topology enables...
This paper presents a performance comparison of two wide band gap (WBG) devices, a silicon carbide (SiC) MOSFET and an enhancement mode gallium nitride (eGaN) FET in a resonant inverter operating at 6.78 MHz for wireless power transfer (WPT) applications. While SiC MOSFETs provide high breakdown voltage and good thermal characteristics, eGaN FETs can reduce gate losses due to small gate resistance...
The wide band-gap Silicon Carbide (SiC) and gallium nitride (GaN) materials based semiconductor devices have attracted tremendous attentions in modern power electronics applications. They provide much higher switching frequency and higher junction temperature than silicon power devices, thus to significantly decrease the system volume and weight, especially on passive components. In this paper, the...
The 15 kV SiC IGBT and 15 kV SiC MOSFET have been recently developed to enable non-cascaded high-frequency (HF) MV converters. Such direct MV DC interfacing Dual Active Bridge (DAB) converter is getting popular for DC micro-grid application due to higher efficiency, higher power-density and higher MTBF over the cascaded DAB topology. The high dv/dt in these devices on hard-switching with their inherent...
In this work, a complete study of the dynamical behavior of a class of switched-capacitor converters is carried out. The relationships between voltages, currents and duty ratio are given, as well as the corresponding ripples on the inductor currents and capacitor voltages that allow the proper selection of elements of the converter. The linear switching, nonlinear average and linear average models...
It is expected that wide-bandgap devices like silicon carbide MOSFETs and gallium nitride HEMTs could replace Si devices in power electronics converters to reach higher system efficiency, e.g., a 3-phase 380VAC bidirectional battery charger for electric vehicles. This paper uses the conventional half-bridge LLC topology to build a 10kW all-SiC bidirectional charger. As a well-known topology for the...
The implementation of a novel bidirectional medium voltage AC-DC converter based on 10kV SiC MOSFET is presented in this paper. The improved topology allows the removal of the reverse blocking silicon diode in medium voltage SiC MOSFET module. Shoot-through problems and avalanche of the integrated silicon diode in traditional medium voltage bridge-type AC-DC converters are solved, allowing zero dead-time...
This paper proposes a systematic method of the topology generation rules to generate dual-buck inverter topologies based on the concept of power flowing routes splitting and reconstruction. By using these topology generation rules, not only the existing dual-buck inverter topologies, but also a family of new transformerless DBFBI topologies with high reliability are derived from conventional H-bridge...
Regarded as one of the most successful wide bandgap (WBG) devices, Silicon Carbide (SiC) metal-oxide-semiconductor field-transistors (MOSFETs) are being considered in an increasing number of power electronics applications. One of those applications is the hybrid and electric vehicle (HEV/EV) traction inverters where high-efficiency and high-power density is essential. From the system-level perspective,...
This paper presents a novel integrated dc/dc topology with a step-up output and a step-down output. A new control scheme is developed to regulate both outputs simultaneously. Compared with discrete configurations, the proposed integrated converter utilizes a lower number of switches due to the reuse of components. The converter characteristics are studied comprehensively. It is demonstrated that all...
This paper compares four different commutation strategies for a new monolithic dual-gate bidirectional IGBT (BD-IGBT) in matrix converters. A new variable-timing four-step commutation and an one-step commutation control strategies are proposed and compared with the conventional and the two-level four-step commutation methods reported previously. Operation modes and power losses of the BD-IGBT using...
This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identified, both reducing the short-circuit capability of SiC power modules in respect to discrete SiC devices. Based on such failure mechanisms, two short...
Single phase uninterruptible power supply (UPS) has been widely used for a variety of critical load to overcome the disruption in utility power supplies. Wide band gap (WBG) power semiconductor devices, such as Silicon Carbide (SiC) finds its application in UPS systems due to its higher switching frequency, lower losses, and higher power density compared to Si devices. In this paper, a full SiC-based...
A short-circuit e.g. in a half-bridge converter is a severe and potentially destructive operation condition for a power transistor and needs to be turned-off quickly and safely. In order to define strategies how to improve the reliability of a power device, it is necessary to understand the failure dynamics during a short-circuit. In this paper, an experimental study focussing on the short-circuit...
This paper describes a “flexbattery” modular battery pack concept that integrates the function of energy storage, active cell balancing, and bidirectional multilevel power conversion. As a result, the flexbattery pack does not have a positive or negative terminal, but terminals that can operate at arbitrary voltage levels, both positive or negative. Since each connection terminal can generate a variable...
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