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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
Plasmonic nanolasers have made rapid progress in recent years, with room temperature lasing being achieved in the ultra-violet to visible wavelength range using ZnO, GaN and CdS semiconductors. However, the binding energy of excitons for semiconductors such as GaAs that emit in the technologically important near infrared region is insufficient to be stable at room temperature. Quantum dots act as...
Temperature dependence of photoluminescence properties of zinc sulfide (ZnS) films, which were successfully grown from aqueous solutions by using mist chemical vapor deposition method, was investigated. The samples were grown at 500–700°C. Although the excitation condition using 325nm HeCd laser was below-gap excitations under 80 K, strong photoluminescence (PL) emissions were observed around 450nm...
We have observed anomalous temperature dependence of magnetization of ZnSnAs2:Mn epitaxial thin films grown on InP(001) substrates compared with the values estimated by the mean-field theory using S = 5/2, as a function of temperature: The ZnSnAs2:Mn epitaxial thin films exhibits slightly increasing magnetization with rising temperature. From the first-principles calculation, when Mn substitutes for...
We report on gate-bias and temperature dependence of pentacene-based organic thin film transistors (OTFTs) with MoO3/Au contacts. In this study, we confirmed to obtain nearly zero activation energy (EA) without applied gate biases at a temperature between 133 K and 293 K. By increasing gate voltage, the activation energy for pentacene-based OTFT decreases concurrently. The effect of activation energy...
We investigated the temperature dependence of dark current, avalanche gain and breakdown voltage in Al0.85Ga0.15As0.56Sb0.44 (hereafter AlGaAsSb) avalanche photodiodes (APDs) with avalanche region widths, w = 90 and 178 nm. There is negligible band to band tunnelling currents and a very weak temperature dependence of gain observed in both didoes. The temperature coefficient of breakdown voltage, C...
We studied the electrical properties of undoped and indium-doped and arsenic-doped CdXHg1−XTe layers with x ≈ 0.3 – 0.4 grown by molecular beam epitaxy on Si (310) substrates. After the growth HgCdTe layers were annealed at mercury atmosphere. The lifetime at room temperature in the As-doped layers, do not depend on its carrier concentration. The lifetime in indium-doped layers increased after annealing...
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