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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
We have successfully mitigated the out-diffusion of Ge during molecular beam epitaxy of InGaAs on Ge by using a GaAsSb layer as evidenced by secondary ion mass spectroscopy. Compared to GaAs, this GaAsSb layer also provides a smoother surface morphology with its root mean square roughness of 0.664 nm. Using a GaAsSb step-graded buffer (SGB) and an AlGaAsSb high resistivity buffer, we are able to grow...
In situ synchrotron X-ray diffraction studies during the growth of arsenide and nitride semiconductors are presented. The large penetration depth of X-rays was exploited for revealing structural changes at buried interfaces as well as near the surface. Experiments were performed at a synchrotron beamline, BL11XU, SPring-8, using a molecular-beam epitaxy chamber integrated with a high-precision X-ray...
We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga1−x,Fex)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy (LT-MBE). Our crystal structure analysis by scanning transmission electron microscopy (STEM) indicates that the (Ga1−x,Fex)Sb thin films maintain the zinc-blende crystal structure at x = 25%. The intrinsic ferromagnetism...
Eu doped GaN (GaN:Eu) shows a sharp line emission and thermal stability of the emission wavelength. To improve the optical properties, GaN:Eu nanocolumns were grown on GaN nanocolumn platform with high crystalline quality by rf-plasma-assisted molecular beam epitaxy. Although it was revealed that an increase of Eu concentration brought about the polycrystalline growth, photoluminescence (PL) intensity...
In this work, we report the structural and electrical properties of InAs/GaSb type-II superlattices (T2SLs) with a cutoff wavelength of 6µm-band grown by metalorganic vapor phase epitaxy (MOVPE), which is advantageous for mass production compared with molecular beam epitaxy (MBE). 200-period InAs/GaSb T2SLs demonstrated an intense photoluminescence peak centered at 6.6µm at 4K and dark current density...
In this study, we have grown cubic InN (c-InN) nano-scale dot arrays using MgO (001) vicinal substrates (3.5 deg. off from (001) toward [110]) by molecular beam epitaxy. The obtained dot arrays have longer ordering length (>1 um) compared with those grown on MgO (001) just substrates. By using MgO (001) vicinal substrates, the structure of cubic GaN (c-GaN) underlayer changed from a mixture of...
We investigate the growth conditions for Selective Area Molecular Beam Epitaxy of GaSb on (001) GaAs inside SiO2 nano-stripes. We show that the use of an atomic hydrogen flux during the growth promote selective epitaxy at low temperature where a few micron long GaSb nanowires can be obtained both in [110] and [11̄0] orientation. Furthermore, we demonstrate that reducing the Sb/Ga flux ratio during...
We demonstrate type-II InP quantum dots (QDs) in InGaP matrix grown using solid-source molecular beam epitaxy (SS-MBE). The QD size becomes larger and photoluminescence peak wavelength longer as the growth rate of InP QDs decreases. Large size type-II InP QDs can be grown with an ultra-low growth rate of 0.006 monolayer (ML)/s. The InP QDs grown with 0.006 ML/s have long carrier life time of about...
We fabricated p-BaSi2/n-Si solar cells by forming a 20-nm-thick B-doped p-BaSi2 epitaxial layer (p = 2.2 × 1018 cm−3) on an n-Si(111) substrate (ρ = 1–4 Ω·cm) by molecular beam epitaxy (MBE). 3-nm-thick amorphous-Si was deposited on the p-BaSi2 surface to prevent the surface oxidation. According to the band alignment of p-BaSi2/n-Si heterojunction, the separation of photogenerated minority carriers...
MgxCd1−xTe (1.7 eV)/Si (1.1 eV) (x∼0.13) tandem cells have the potential to reach conversion efficiencies greater than 30% with low cost. Mg0.13Cd0.87Te/MgyCd1−yTe (y>0.13) double-heterostructures (DH) grown by molecular beam epitaxy feature 1.7 eV bandgaps and very high absorption coefficients measured by photoluminescence (PL) and ellipsometry. Both undoped and n-doped Mg0.13Cd0.87Te/MgyCd1−y...
We present a fabrication method for a photonic crystal membrane consisting of Er2O3/Si, and investigate the induced photonic band-gap effect. We obtain a fine photonic crystal structure by selective area growth of Er2O3 on a pre-patterned Si(111) membrane by the molecular beam epitaxy method, and the fabricated Er2O3/Si photonic crystals show the suppression of the radiative transition as a result...
The control and assessment of doping in GaN nanostructures are crucial for the realization of GaN based nanodevices. In this study, we have investigated a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2–3 µm in length, and 20–200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher...
GaN-based nanowires (NWs) are attracting interest for realizing highly luminant light emitters, which fill green gaps of current LEDs, and selective-area growth (SAG) is one of the key technologies for their realization. We investigated the influences of mask materials in SAG of GaN using RF-molecular beam epitaxy (RF-MBE), and found significant differences of the growth conditions and growth modes...
We fabricated nanoscale-gate Al0.25In0.75Sb/InSb high electron mobility transistors (HEMTs) grown on a (100) GaAs structure by molecular beam epitaxy (MBE) and measured their DC and RF performances at room temperature. The epitaxial structure had an electron mobility (μ) of 17,700 cm2/Vs with a sheet carrier concentration (Ns) of 1.06×1012 cm−2. We also introduced an evaporated SiOx passivation film...
Gallium antimonide (GaSb) dots and thin-film GaSb using GaSb dots as nucleation layer were grown on a 2-inch Si(100) substrate by molecular beam epitaxy (MBE). Compared to our previous works in ultrahigh vacuum scanning tunneling microscopy (UHV-STM) system, higher-density and smaller-size GaSb dots were formed on the Si(100) substrate at 300?C. It is considered that the difference of Sb species and...
We fabricated 850-nm-thick BaSi2 films on p-Ge(111) substrates by molecular beam epitaxy using the template grown by solid phase epitaxy (SPE), and characterized their crystalline qualities and photoresponse properties. We succeeded to grow almost a-axis-oriented BaSi2 films on the SPE-BaSi2 templates. The root-mean-square of the surface roughness was approximately 5.8 nm. This value was much smaller...
We fabricated (Zn, Sn, Ga)As2 thin films grown on semi-insulating GaAs(001) substrate by molecular beam epitaxy and characterized their structural, compositional and electrical properties in terms of conduction-type control. The X-ray diffraction peaks of (Zn, Sn, Ga)As2 films which shift toward lower angle compared with that of (Zn, Sn)As2 film indicate that Ga incorporating in (Zn, Sn)As2 decrease...
Multilayer structures comprised of a central layer of the binary transition metal pnictide MnSb and outer layers of standard semiconductors have been grown using molecular beam epitaxy (MBE). The growth of the GaAs overlayers was characterized using a combination of reflection high energy electron diffraction (RHEED) and in situ surface x-ray diffraction (SXRD). It was found that a GaAs overlayer...
We investigated the influence of growth parameters on the film properties of multinary ZnSnAs2 thin films with and without Mn doping grown by molecular beam epitaxy (MBE) on InP substrates. As growth parameters, the substrate temperature and the beam equivalent pressure (BEP) were varied. The most stoichiometric ZnSnAs2 thin film was obtained when the substrate temperature was 340 °C. We found that...
InAs quantum dots (QDs) were grown on GaAs by molecular beam epitaxy using As2 molecules (As2-QDs) and were structurally and optically characterized. Photoluminescence (PL) measurements revealed unique optical properties of the As2-QDs, which differ from InAs QDs grown with As4 (As4-QDs). As2-QDs exhibited PL emission centered at 1.14–1.21 µm, which is shorter than that of As4-QDs (1.21–1.22 µm)....
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