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A silicon carbide split-gate MOSFET (SG-MOSFET) is proposed in this paper, which features a Schottky barrier diode embedded above the JFET region between the split gates. Therefore, the proposed SG-MOSFET boasts a unipolar reverse conduction path with low turn-on voltage. Additionally, the gate-to-drain charge in the proposed device is greatly reduced, owing to the presence of the Schottky anode that...
This paper presents the new gate structure concept in trench gate IGBTs in order to have extended performance in faster switching without penalties on the on-state voltage drop (Von). The combination of the trench gate and adjacent emitter-connected trench achieves the dramatic Miller capacitance reduction while maintaining the enough Injection Enhancement (IE) effect. The experimental demonstration...
GaN Cascode performance optimization for high efficient power applications is presented in this paper. Analytical equations of Cascode capacitance network (Ciss, Coss, Cgd) is demonstrated and the equations accuracy is verified through experimental measurement. Analysis shows that Cascode Cgd is determined by HV D-MISFETs Cds, LV Si FETs Cgd/Coss ratio, and extra zener diode capacitance. With low...
The desaturation and charge recovery behavior for 1200-V RC-IGBTs with diode control is investigated. The low thickness of the drift-region of modern 1200-V IGBTs results in significantly reduced time constants of the diode-control feature. While a low desaturation time constant is well acceptable, the recovery time constant becomes critical when compared to typical locking time requirements of common...
Optimization of a cell structure affecting gate capacitance must have an important role to upgrade usability of IGBT at high frequency operation. In this paper, we report an experimental study on the IGBT cell structures with various arrangements of active trenches connected to gate. Utilizing the advanced active trench layout with well-balanced capacitance realized to lower dV/dt surge and turn-on...
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