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A Reverse Conducting IGBT (RC-IGBT) is a promising device to reduce a size and cost of the power module thanks to the integration of IGBT and FWD into a single chip. However, it is difficult to achieve well-balanced performance between IGBT and FWD. Indeed, the total inverter loss of the conventional RC-IGBT was not so small as the individual IGBT and FWD pair. To minimize the loss, the most important...
In this work, a novel ESD failure mechanism for the LDMOS with low on-resistance and large geometric array used as output device is presented. A novel structure based on the failure mechanism is also proposed to improve its ESD robustness. The secondary break current (It2) of the modified LDMOS is increased by almost 50% without changing other characteristics basically.
Optimization of a cell structure affecting gate capacitance must have an important role to upgrade usability of IGBT at high frequency operation. In this paper, we report an experimental study on the IGBT cell structures with various arrangements of active trenches connected to gate. Utilizing the advanced active trench layout with well-balanced capacitance realized to lower dV/dt surge and turn-on...
Optimizing the edge termination design around the periphery of active area is critically important for achieving the highest and stable breakdown voltage (BVdss) for any power devices. Active cell structures can be assumed as two dimensional (2-D) in the central part of the die, however as the active cells terminate to the termination regions at the periphery of the die, 2-D and 3-D transition regions...
In this paper, we present the integration of RESURF high-voltage lateral Power MOSFETs which achieve highly competitive figures of merit (such as Rsp, defined as Rdson∗Area) in a Trench-Isolated 0.18 micron 100V-rated BCD technology. The new high-voltage LDMOS are rated for operation up to 45V, 60V, 80V and 100V and achieve BVdss & Rsp of 55V/32 mOhm∗mm2, 75V/57 mOhm∗mm2, 100V/91 mOhm∗mm2 and...
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