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A new gate recess process technology has been implemented in normally off GaN based gate injection transistors (GITs) on Si substrate, in order to realize the process stability. In this process, compared to conventional recessed gate structure, the AlGaN barrier is fully removed in the gate region and then AlGaN is reproduced by epitaxial regrowth for the first time. By using this technology, standard...
In this work, static and dynamic characteristics of an AlGaN/GaN-on-Si power field-effect transistor (FET) with the integrated photonic-ohmic drain (POD) were systematically investigated. With the photon generation and channel current inherently switched ON and OFF in synchronization, dynamic performances (e.g. dynamic ON-resistance) of the PODFET can be significantly enhanced owing to photon pumping...
This paper presents a detailed study of the failure mechanisms induced by a forward bias overstress on gallium nitride (GaN) high electron mobility transistors (HEMTs) with p-type gate. DC measurements demonstrate that GaN-HEMTs with p-GaN gate show a time-dependent catastrophic degradation when submitted to forward-gate overstress. Time to failure (TTF) can be described by a Weibull distribution...
Similarly to the unipolar SiC Schottky diodes, AlGaN/GaN Schottky devices have been suggested to have a negligible reverse recovery current during turn-off and can therefore be switched at very high frequencies with low power losses [1-2]. This study aims to investigate this claim by comparing the reverse recovery characteristic of an AlGaN/GaN diode with that of a SiC diode and a fast recovery Si...
This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ...
The p-GaN gate HEMT device architecture is a prime contender for normally-off GaN power transistors. In this work the growth parameters of the Mg doped p-type GaN layer are varied and the impact of Mg out-diffusion and Mg activation on the main HEMT device parameters is studied. The Mg chemical concentration is optimized together with the Mg active concentration to obtain improved device performance...
A novel GaN/SiC HyFET is proposed as a high-voltage power switch with low ON-resistance and enhanced switching performance. The device combines the merits of SiC vertical devices and GaN lateral HEMTs by utilizing a SiC drift region to sustain high OFF-state voltage and an enhancement-mode AlGaN/GaN heterojunction channel to reduce the channel resistance. Compared with conventional SiC MOSFETs of...
The piezoelectric stress distribution induced in the GaN layer of AlGaN/GaN Schottky Barrier Diodes (SBDs) under a DC reverse voltage of −250 V is directly measured using micro-Raman spectroscopy. The highest piezoelectric stress measurable near the anode fieldplate edge is 380 ± 40 MPa, which is similar to the stress measured in an AlGaN/GaN SBD under reverse-bias cycling at −400 V in a high voltage...
This work for the first time explores the use of p-diamond as multi-functional back-barriers in GaN high electron mobility transistors (HEMTs). A well-calibrated self-consistent electro-thermal simulation has revealed that multi-functional p-diamond back-barriers can improve the performance of HEMTs, by achieving over 3 times higher breakdown voltage (BV), at least 30% higher thermal performance,...
This paper extends our 650V rated GaN device technology to current ratings in excess of 100A. For the first time, devices with single digit Ron values are reported. A record low value of 6mΩ is measured at 100A. The device technology is shown to be fully current collapse free, over the complete voltage and temperature window. Intrinsic reliability test data up to Vds=900V, and T=200°C is provided...
More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16–22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works...
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