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In this paper, we propose the integration of an Al2O3/CuTex based Conductive Bridge RAM (CBRAM) device in vertical configuration. The performances of the memory devices are evaluated. 20ns switching time, up to 106 cycles and stable 150°C retention were demonstrated. Functionality is compared with Vertical RRAM integrating an HfO2/Ti OXRAM stack, showing the pros and cons of each configuration. Then...
For the first time, by using a novel multiple individual bank sensing/writing and a memory bank interleave design, we demonstrate a double date rate 2 (DDR2) DRAM like interface phase-change memory (PCM) for M-type storage class memory applications . The write and read bandwidth is equal to 533MB/s, and the random read latency is 37.5ns, while the write latency is 11.25ns supporting a random write...
A totally analytic compact model of bipolar switching in oxide based resistive memory is reported. Analytical expressions reproducing the switching in the case of ramp voltage and short voltage pulses without any iterative procedure are given. The model results are compared to experimental data and to a numerical model containing the same physical basis.
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