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In this paper the memory performances of the TiN/HfO2/Ti/TiN and TiN/Ta2O5/TaOx/TiN memory stacks are compared. First, the bipolar switching parameters and the effect of the compliance current on the memory window and endurance are investigated. Then, the endurance and data retention properties are compared at a given operating current (100µA). Ta2O5 based memory stack exhibits a better memory window...
In this paper we investigate the impact of N- doping in optimized Ge-rich Ge2Sb2Te5 materials on device programming and storing performance. We integrate these alloys in state-of-the-art Phase- Change Memory (PCM) cells and we analyze the efficiency of the SET operation in N-doped and undoped memory cells, comparing voltage based programming with current based programming. This aspect is extensively...
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